Reflection electron energy loss spectroscopy during initial stages of Ge growth on Si by molecular beam epitaxy
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چکیده
منابع مشابه
Reflection electron energy loss spectroscopy during initial stages of Ge growth on Si by molecular beam epitaxy
Using a conventional reflection high-energy electron diffraction gun together with an electron energy loss spectrometer, we have combined in situ measurements of inelastic scattering intensities from Si L2 s and Ge L2,3 core losses with reflection electron diffraction data in order to analyze the initial stages of Ge heteroepitaxy on Si(OO1). Diffraction data indicate an initial layer-by-layer ...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1991
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.104685